STGW20NB60HD n-channel 20a - 600v to-247 powermesh ? igbt n high input impedance (voltage driven) n low on-voltage drop (v cesat ) n low gate charge n high current capability n very high frequency operation n off losses include tail current n co-packaged with turboswitch ? antiparallel diode description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding perfomances. the suffix "h" identifies a family optimized to achieve very low switching times for high frequency applications (<120khz). applications n high frequency motor controls n welding equipments n smps and pfc in both hard switch and resonant topologies ? internal schematic diagram absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 600 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c = 25 o c40a i c collector current (continuous) at t c = 100 o c20a i cm ( ) collector current (pulsed) 160 a p tot total dissipation at t c = 25 o c150w derating factor 1.2 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area type v ces v ce(sat) i c STGW20NB60HD 600 v < 2.8 v 20 a june 1999 1 2 3 to-247 1/8
thermal data r thj-case r thj-amb r thc-h thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-heatsink typ 0.83 30 0.1 o c/w oc/w o c/w electrical characteristics (t j = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250 m a v ge = 0 600 v i ces collector cut-off (v ge = 0) v ce = max rating t j = 25 o c v ce = max rating t j = 125 o c 250 2000 m a m a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v v ce = 0 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce = v ge i c = 250 m a35v v ce(sat) collector-emitter saturation voltage v ge = 15 v i c = 20 a v ge = 15 v i c = 20 a t j = 125 o c 2.3 1.9 2.8 v v dynamic symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25 v i c = 20 a 7.0 10 s c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v f = 1 mhz v ge = 0 1200 140 28 1700 200 40 2200 260 52 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v i c = 20 a v ge = 15 v 110 13 51 145 nc nc nc i cl latching current v clamp = 480 v r g =10 w t j = 150 o c 80 a switching on symbol parameter test conditions min. typ. max. unit t d(on) t r delay time rise time v cc = 480 v i c = 20 a v ge = 15 v r g = 10 w 20 70 ns ns (di/dt) on e on ( m ) turn-on current slope turn-on switching losses v cc = 480 v i c = 20 a r g = 10 w v ge = 15 v t j = 125 o c 350 550 a/ m s m j STGW20NB60HD 2/8
electrical characteristics (continued) switching off symbol parameter test conditions min. typ. max. unit t c t r (v off ) t d ( off ) t f e off (**) e ts ( m ) cross-over time off voltage rise time delay time fall time turn-off switching loss total switching loss v cc = 480 v i c = 20 a r ge = 10 w v ge = 15 v 115 32 170 75 0.4 0.9 ns ns ns ns mj mj t c t r (v off ) t d ( off ) t f e off (**) e ts ( m ) cross-over time off voltage rise time delay time fall time turn-off switching loss total switching loss v cc = 480 v i c = 20 a r ge = 10 w v ge = 15 v t j = 125 o c 190 55 210 140 0.7 1.25 ns ns ns ns mj mj collector-emitter diode symbol parameter test conditions min. typ. max. unit i f i fm forward current forward current pulsed 20 160 a a v f forward on-voltage i f = 20 a i f = 20 a t j = 125 o c 1.50 1.25 2.0 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 20 a v r = 200 v di/dt = 100 a/ m s t j = 125 o c 100 300 5.9 ns nc a ( ) pulse width limited by max. junction temperature ( m ) include recovery losses on the stta2006 freewheeling diode ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % (**)losses include also the tail (jedec standardization) thermal impedance STGW20NB60HD 3/8
output characteristics transconductance collector-emitter on voltage vs collector current transfer characteristics collector-emitter on voltage vs temperature gate threshold vs temperature STGW20NB60HD 4/8
normalized breakdown voltage vs temperature gate charge vs gate-emitter voltage total switching losses vs temperature capacitance variations total switching losses vs gate resistance total switching losses vs collector current STGW20NB60HD 5/8
switching off safe operating area diode forward voltage fig. 1 : gate charge test circuit fig. 3 : switching waveforms fig. 2 : test circuit for inductive load switching STGW20NB60HD 6/8
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data STGW20NB60HD 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this pu blication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . STGW20NB60HD 8/8
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